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发表于 2025-3-23 12:39:34
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发表于 2025-3-23 19:27:02
https://doi.org/10.1007/978-1-4684-3674-7Tunnel diode; band structure; crystal; diffusion; electron; physics; resistance; semiconductor; semiconducto
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发表于 2025-3-24 02:03:52
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眨眼
发表于 2025-3-24 05:50:13
978-1-4684-3676-1Springer Science+Business Media New York 1980
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SUE
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角斗士
发表于 2025-3-24 20:36:07
Physics of Metal-Semiconductor and Metal-Insulator-Semiconductor Junctions, the band diagram of an idealized MIS structure. The key result is the formation of an inversion layer at the insulator-semiconductor interface when an appropriate potential is applied. This result will be used in the next chapter to study two important devices, the induced-channel field-effect transistor and the charge-coupled device.
Constituent
发表于 2025-3-25 00:54:20
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