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发表于 2025-3-21 17:17:43
书目名称Into The Nano Era影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0473096<br><br> <br><br>书目名称Into The Nano Era影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0473096<br><br> <br><br>书目名称Into The Nano Era网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0473096<br><br> <br><br>书目名称Into The Nano Era网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0473096<br><br> <br><br>书目名称Into The Nano Era被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0473096<br><br> <br><br>书目名称Into The Nano Era被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0473096<br><br> <br><br>书目名称Into The Nano Era年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0473096<br><br> <br><br>书目名称Into The Nano Era年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0473096<br><br> <br><br>书目名称Into The Nano Era读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0473096<br><br> <br><br>书目名称Into The Nano Era读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0473096<br><br> <br><br>
ALLAY
发表于 2025-3-21 20:21:18
Howard R. HuffProvides a unique insight into the development of Si-based micro- and nanoelectronics.Analyzes the historic developments and presents the current state-of-the-art, giving a survey of the currently mos
别名
发表于 2025-3-22 01:54:13
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CALL
发表于 2025-3-22 07:38:25
978-3-642-09397-5Springer-Verlag Berlin Heidelberg 2009
septicemia
发表于 2025-3-22 12:40:50
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cochlea
发表于 2025-3-22 14:35:52
Silicon: Child and Progenitor of Revolutionsilicon. Argument at once broke out among the scientific elite as to whether the newly found element was a metal or an insulator. It took more than a century to settle that disagreement decisively: As so often, when all-or-nothing alternatives are fiercely argued, the truth turned out to be neither all nor nothing.
Infelicity
发表于 2025-3-22 17:48:37
Enhanced Carrier Mobility for Improved CMOS Performancely difficult to further reduce critical dimensions such as gate oxide thickness, alternative methods of improving transistor performance are also being employed. One important approach is to increase the electron and hole mobility.
adumbrate
发表于 2025-3-23 00:38:59
Transistor Scaling to the Limitotential barrier) of the device itself. As a result, MOSFET scaling was able to progress at an exponential rate [.], yielding commensurate improvements in integration, cost, and performance, with revolutionary impact to usher in the Information Age.
Anal-Canal
发表于 2025-3-23 03:47:33
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Acupressure
发表于 2025-3-23 05:42:29
Nano-Whatever: Do We , Know Where We Are Heading?cs and technology. The prefix . suddenly gets attached to everything (this conference is no exception), and we are deluged with predictions about fantastic future applications, often promised for the immediate future.