复杂
发表于 2025-3-21 19:33:42
书目名称Integrated Nanoelectronics影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0468563<br><br> <br><br>书目名称Integrated Nanoelectronics影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0468563<br><br> <br><br>书目名称Integrated Nanoelectronics网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0468563<br><br> <br><br>书目名称Integrated Nanoelectronics网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0468563<br><br> <br><br>书目名称Integrated Nanoelectronics被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0468563<br><br> <br><br>书目名称Integrated Nanoelectronics被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0468563<br><br> <br><br>书目名称Integrated Nanoelectronics年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0468563<br><br> <br><br>书目名称Integrated Nanoelectronics年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0468563<br><br> <br><br>书目名称Integrated Nanoelectronics读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0468563<br><br> <br><br>书目名称Integrated Nanoelectronics读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0468563<br><br> <br><br>
昆虫
发表于 2025-3-21 22:06:01
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TEM
发表于 2025-3-22 04:16:34
Nanomaterials and Their Propertiesan Commission (EC) concerning nanomaterials is described. Ultrafine grained materials with grain size in nanoscale range show unusually higher mechanical strength than coarse-grained materials. Two vital characterizing parameters representing the degree of dominance of surface effects in materials a
愤怒事实
发表于 2025-3-22 06:53:35
Downscaling Classical MOSFETevices combined into the well-known CMOS configuration has been constantly downscaled. Riding on the classical MOSFET workhorse, integrated circuits have steadily marched a long way towards the nanoscale. Constant field and constant voltage scaling schemes have been applied. The downscaling succeede
Watemelon
发表于 2025-3-22 09:28:42
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incite
发表于 2025-3-22 14:58:20
SOI-MOSFETsSFET structures were direly needed in order that the pace of the progress is not slackened. It was also evident that short-channel effects could only be obviated if the gate action could be strengthened so that the channel region is always under the solitary control of the gate. The advent of silico
LAVA
发表于 2025-3-22 20:21:11
Trigate FETs and FINFETsitecture. The changeover to SOI-MOSFET, particularly the FD-SOI-MOSFET, succeeded to a large extent in meeting the challenges without any fundamental modification of the structure. Alternative choices proposed were trigate FET and FINFET structures, which marked the end of planar era and entailed a
本土
发表于 2025-3-23 00:22:46
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membrane
发表于 2025-3-23 03:41:55
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绅士
发表于 2025-3-23 06:06:14
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