neurologist
发表于 2025-3-28 16:17:30
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斜
发表于 2025-3-28 19:52:26
Error correction codes,deals with error correction codes applied to NAND Flash memories. In fact, when the memory is placed in its final application, different reasons for errors (see Chap. 4) can damage the written information so that it could happen that the read message is not equal to the original anymore .
Assault
发表于 2025-3-29 02:34:04
Flash cards,mon characteristics. In this chapter, we will describe memory cards from a user standpoint, their internal architecture and the algorithms operating within, the difficulties with relevant counter-stratagems inherent in their design.
Indurate
发表于 2025-3-29 07:01:41
https://doi.org/10.1007/978-90-481-9431-5Electronic Devices; Flash Memories; NAND Memories; Solid State Circuits; integrated circuit; single-elect
excrete
发表于 2025-3-29 09:49:51
Book 2010rvade every aspect of our life, just imagine how our recent habits would change if the NAND memories suddenly disappeared. To take a picture it would be necessary to find a film (as well as a traditional camera…), disks or even magnetic tapes would be used to record a video or to listen a song, and
在前面
发表于 2025-3-29 12:37:32
Charge trap NAND technologies,r as storage element, in CT case electrons are trapped inside a dielectric layer. The different storage material change drastically cell architecture impacting also on physical mechanisms for write operations (both program and erase) and reliability.
亲爱
发表于 2025-3-29 18:00:54
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Synapse
发表于 2025-3-29 22:29:30
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BARK
发表于 2025-3-30 01:58:47
Radiation effects on NAND Flash memories,zed by a significant presence of ionizing radiation, in the form of protons, electrons, and heavy-ions coming from various sources. Ionizing radiation can cause either permanent or temporary damage to electronic chips, generating a plethora of effects, from flipping an SRAM memory bit from 1 to 0 or vice versa, to burning-out a power MOSFET.
著名
发表于 2025-3-30 05:52:21
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