胆小鬼 发表于 2025-3-26 22:53:06

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neoplasm 发表于 2025-3-27 02:53:39

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Firefly 发表于 2025-3-27 07:02:20

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鸽子 发表于 2025-3-27 12:36:11

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Hallowed 发表于 2025-3-27 13:45:28

Conclusions and Recommendations,ystal is random, the final number and location of atoms in the channel of each transistor is a random variable. As the threshold voltage of the transistor is determined by the number and placement of dopant atoms, it will exhibit a significant variation, which leads to variation in the transistors’

FLAG 发表于 2025-3-27 17:52:52

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查看完整版本: Titlebook: Inorganic Ring Systems; T. Chivers,R. Keat,M. G. Voronkov Conference proceedings 1982 Springer-Verlag Berlin Heidelberg 1982 Anorganische