SHRIK
发表于 2025-3-25 06:45:14
978-0-387-96945-9Springer-Verlag New York Inc. 1989
整洁
发表于 2025-3-25 10:03:43
Ignorance and Uncertainty978-1-4612-3628-3Series ISSN 1431-1887
光亮
发表于 2025-3-25 13:12:25
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Acclaim
发表于 2025-3-25 19:39:29
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裤子
发表于 2025-3-25 20:01:47
John Andradeant issue at the confluence of thesetwo branches of philosophy, namely: Can we .know. facts fromreliable reports? Besides Hume‘s subversive discussion of miracles andthe literature thereon, testimony has been bypassed by most Westernphilosophers; whereas in classical Indian (Pramana) theories ofevid
柔软
发表于 2025-3-26 02:51:47
Evaluation for Effective Use of Dredged Soil as Containment Dikes of Disposal Pondji-Oki disposal pond (S-3) 9 years ago. Since this sample is an artificial material, its long-term stability has not been confirmed. In order to understand the evolution of the properties of the constructed revetment over time, mechanical tests, such as direct shear tests, have been conducted on blo
Acclaim
发表于 2025-3-26 05:44:45
Searching Cellular Automata Rules for Solving Two-Dimensional Binary Classification Problemsional, three-state cellular automaton (CA) with the von Neumann neighborhood. Since the number of possible CA rules (potential CA-based classifiers) is huge, searching efficient rules is conducted with use of a genetic algorithm (GA). Experiments show an very good performance of discovered rules in
Living-Will
发表于 2025-3-26 09:38:42
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Demonstrate
发表于 2025-3-26 16:27:51
The Limits of Prediction (Part A): A Futile Pursuit?, or make algorithms that learn from data. It’s natural for someone to ask, what exactly . we predict and what can’t we? How can we have faith in our predictions? What are the limits of our knowledge? Is it always the case that we won’t know what we don’t know, or can we, at least, get an understandi
词根词缀法
发表于 2025-3-26 19:26:18
Variability in Nanoscale FinFET Technologies,e edge roughness (LER), random dopant fluctuation (RDF), oxide thickness fluctuation (OTF), and work function variation (WFV) can significantly affect the performance of individual transistors through random variations in device metrics such as threshold voltage (. .), on-state drive current (. .),