的’
发表于 2025-3-23 12:41:22
http://reply.papertrans.cn/47/4603/460282/460282_11.png
粗糙
发表于 2025-3-23 13:51:09
http://reply.papertrans.cn/47/4603/460282/460282_12.png
Infuriate
发表于 2025-3-23 21:40:55
High-Efficiency Top-Emitting III-Nitride LEDs,er that, we introduce back reflector and low optical loss electrodes to decrease light loss and improve light extraction efficiency. At the last section, we introduce a type of Ni/Au wire grids transparent conductive layer.
健忘症
发表于 2025-3-24 00:47:58
https://doi.org/10.1007/978-981-19-0436-3III-Nitride semiconductors; Light extraction efficiency; Internal quantum efficiency; External quantum
perimenopause
发表于 2025-3-24 04:23:33
http://reply.papertrans.cn/47/4603/460282/460282_15.png
垫子
发表于 2025-3-24 07:21:19
Epitaxial Growth of III-Nitride LEDs,ed. Secondly, InGaN/GaN superlattice and stacked GaN/AlN last quantum barrier to improve the performance of green LED are introduced. Finally, several strategies to improve the performance of ultraviolet LED are discussed in detail.
心痛
发表于 2025-3-24 11:50:00
http://reply.papertrans.cn/47/4603/460282/460282_17.png
嘲笑
发表于 2025-3-24 16:33:58
Device Reliability and Measurement, the mechanism of forward leakage current and reverse leakage current is analyzed. Thirdly, the method to improve luster consistency is proposed. Finally, transient measurement methods of photometric parameters, colorimetric parameters, and electrical parameters of LEDs are discussed.
飓风
发表于 2025-3-24 20:41:40
http://reply.papertrans.cn/47/4603/460282/460282_19.png
省略
发表于 2025-3-25 02:30:53
Shengjun Zhou,Sheng LiuPresents the state-of-the-art research on III-nitrides-based LEDs.Covers the physical background, the epitaxial growth and device fabrication of III-nitrides-based LEDs.A valuable source of reference