宪法没有
发表于 2025-3-25 03:58:21
Active Region Part A. Internal Quantum Efficiency in LEDs,ed technique based on temperature-dependent photoluminescence relies in strong assumptions which are discussed in this chapter. We introduce an alternative method to determine IQE based on electroluminescence, in which the external quantum efficiency (EQE) is measured from a single facet of the LED,
intimate
发表于 2025-3-25 10:04:26
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柔软
发表于 2025-3-25 13:39:24
Electrical Properties, Reliability Issues, and ESD Robustness of InGaN-Based LEDs,in degradation processes, we will give a brief overview on the electrical (current-voltage) characteristics of LEDs, to provide the basic information which is useful to understand the electrical characterization data reported in the subsequent part of the chapter. On the basis of literature data, we
nephritis
发表于 2025-3-25 17:56:35
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缺陷
发表于 2025-3-25 21:37:47
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把…比做
发表于 2025-3-26 00:53:39
Packaging. Phosphors and White LED Packaging,ns as well as phosphors utilized in white LEDs are firstly discussed, followed by the overview of the technologically important phosphors, including yttrium aluminum garnets, alkaline earth orthosilicates, alkaline earth sulfides/thiogallets, and (oxo)nitridosilicates (i.e., nitrides). Typically, (o
土产
发表于 2025-3-26 07:10:36
High Voltage LEDs,ode (HVLED) and alternating current light emitting diode (ACLED) were extensively discussed. Some important issues, such as the efficiency drooping, flickering illumination, harmonic distortion limitation, and lifetime result of the HV/ACLED were also studied. Furthermore, packaging methods, safety
显赫的人
发表于 2025-3-26 10:07:20
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孤独无助
发表于 2025-3-26 15:13:36
Emerging System Level Applications for LED Technology,lth, communications, and display technologies. Currently, almost every aspect of LED technology from substrates to systems applications is undergoing rapid technical evolution, so projections about future system level applications are highly speculative, and this assessment presumes that solutions t
机密
发表于 2025-3-26 17:34:05
Epitaxy Part A. LEDs Based on Heteroepitaxial GaN on Si Substrates,AlGaN intermediate layers, (ii) HT intermediate layers (ILs) and multilayers (MLs), and (iii) strained-layer superlattices (SLS) interlayers and their LED performances respectively. We believe that GaN/Si LEDs with low prices will become important LEDs for general lighting in the near future.