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oming a major design concern. On the one hand, the detrimental effects-such as transconductance degradation and threshold shift-need to be minimized or, if possible, avoided altogether. On the other hand, performance such as the programming efficiency of nonvolatile memories or the carrier velocity
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Hot-Carrier Degradation During Dynamic Stress,udies is whether the AC degradation can or cannot be predicted based on a set of DC degradation measurements. When the prediction based on DC measurements stands true, the AC degradation can be studied as a quasistatic process. When, however, the extrapolation turns out to be invalid, physical insight should be obtained for the deviating behavior.
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Hot Carrier Design Considerations for MOS Devices and Circuits