STRI
发表于 2025-3-21 18:17:51
书目名称High-Bandwidth Memory Interface影响因子(影响力)<br> http://impactfactor.cn/2024/if/?ISSN=BK0426557<br><br> <br><br>书目名称High-Bandwidth Memory Interface影响因子(影响力)学科排名<br> http://impactfactor.cn/2024/ifr/?ISSN=BK0426557<br><br> <br><br>书目名称High-Bandwidth Memory Interface网络公开度<br> http://impactfactor.cn/2024/at/?ISSN=BK0426557<br><br> <br><br>书目名称High-Bandwidth Memory Interface网络公开度学科排名<br> http://impactfactor.cn/2024/atr/?ISSN=BK0426557<br><br> <br><br>书目名称High-Bandwidth Memory Interface被引频次<br> http://impactfactor.cn/2024/tc/?ISSN=BK0426557<br><br> <br><br>书目名称High-Bandwidth Memory Interface被引频次学科排名<br> http://impactfactor.cn/2024/tcr/?ISSN=BK0426557<br><br> <br><br>书目名称High-Bandwidth Memory Interface年度引用<br> http://impactfactor.cn/2024/ii/?ISSN=BK0426557<br><br> <br><br>书目名称High-Bandwidth Memory Interface年度引用学科排名<br> http://impactfactor.cn/2024/iir/?ISSN=BK0426557<br><br> <br><br>书目名称High-Bandwidth Memory Interface读者反馈<br> http://impactfactor.cn/2024/5y/?ISSN=BK0426557<br><br> <br><br>书目名称High-Bandwidth Memory Interface读者反馈学科排名<br> http://impactfactor.cn/2024/5yr/?ISSN=BK0426557<br><br> <br><br>
卷发
发表于 2025-3-21 21:12:16
2191-8112 f-the-art techniques for memory interface design.Covers memoThis book provides an overview of recent advances in memory interface design at both the architecture and circuit levels. Coverage includes signal integrity and testing, TSV interface, high-speed serial interface including equalization, ODT
脱水
发表于 2025-3-22 00:23:46
http://reply.papertrans.cn/43/4266/426557/426557_3.png
NOT
发表于 2025-3-22 07:06:39
http://reply.papertrans.cn/43/4266/426557/426557_4.png
Palter
发表于 2025-3-22 10:29:25
http://reply.papertrans.cn/43/4266/426557/426557_5.png
刺激
发表于 2025-3-22 14:07:01
An Introduction to High-Speed DRAM,ity of DRAM. Wide I/O DRAM is one alternative type of memory, as is TSV-based stacked memory. In this chapter, we introduce the fundamentals of high-speed DRAM operation. We do not cover the basic knowledge of complementary metal-oxide semiconductor (CMOS) circuits including design, layout, and simulation.
POLYP
发表于 2025-3-22 18:47:09
An Introduction to High-Speed DRAM,reased to keep pace with the performance of application system. Up to now, 7 Gb/s/pin GDDR5 is the fastest SDRAM adopted in graphics cards (R. Rho et al., ., vol. 45, no. 1, pp. 120–133, 2010; T.-Y. Oh et al., ., vol. 46, no. 1, pp. 120–133, 2011; D. Shin et al., IEEE Symp. on Very Large Scale Integ
圣人
发表于 2025-3-22 23:17:07
http://reply.papertrans.cn/43/4266/426557/426557_8.png
天真
发表于 2025-3-23 04:31:06
Transceiver Design, to compensate for the channel loss, pre-emphasis at the transmitter is performed and equalization at the receiver is performed. Also, the multi-channel interface causes crosstalk and skew effect. These effects should be covered in DRAM interface design. Other issues in transceiver design are impeda
注意
发表于 2025-3-23 09:26:38
ssumed to have a basic knowledge of analysis and linear algebra at an undergraduate level. Stochastic models are applied in many fields such as engineering systems, physics, biology, operations research, business, economics, psychology, and linguistics. Stochastic modeling is one of the promising ki