麻烦
发表于 2025-3-21 16:10:22
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legacy
发表于 2025-3-21 23:43:04
Introduction,Chapter 1 briefly discusses the historical context and major technological developments in the microelectronics industry.
阐释
发表于 2025-3-22 04:18:59
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NAUT
发表于 2025-3-22 07:19:20
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Exclaim
发表于 2025-3-22 10:40:33
Electrical TCAD Simulations and Modeling in Germanium,Chapter 4 extends a TCAD device simulator to allow electrical simulations of scaled Ge MOSFETs.
商议
发表于 2025-3-22 13:51:25
Investigation of Quantum Well Transistors for Scaled Technologies,Chapter 5 discusses the scaling issues in bulk silicon and bulk germanium MOSFET technologies. Afterwards, Heterostructure confinement is investigated as a means to enhance MOSFET scalability. The Implant-Free Quantum Well FET is introduced and its performance analyzed using TCAD simulations.
袋鼠
发表于 2025-3-22 19:39:21
Implant-Free Quantum Well FETs: Experimental Investigation,Chapter 6 complements the design considerations of Implant-Free Quantum Well FETs presented in Chap. .. Such transistors are fabricated and electrically characterized.
跟随
发表于 2025-3-22 23:09:10
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Palate
发表于 2025-3-23 01:37:59
978-94-007-9569-3Springer Science+Business Media Dordrecht 2013
让步
发表于 2025-3-23 06:28:57
High Mobility and Quantum Well Transistors978-94-007-6340-1Series ISSN 1437-0387 Series E-ISSN 2197-6643