OATH 发表于 2025-3-30 08:46:14

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委派 发表于 2025-3-30 14:10:50

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希望 发表于 2025-3-30 19:48:17

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accessory 发表于 2025-3-31 00:23:45

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讽刺 发表于 2025-3-31 01:02:34

Magnetic Field Induced Transitions Between Quantized Hall and Insulator States in a Dilute 2D ElectrGΩ. This phenomenon is observed in extremely high mobility Si MOSFETs, in a range of electron concentrations corresponding to a dilute 2D electron gas in or near an activated electronic transport regime. We attribute this effect to a modulation of the metal-insulator transition by the Quantum Hall effect.

anesthesia 发表于 2025-3-31 08:06:02

Exact Widths and Tails for Landau Levels Broadened by a Random Potential with an Arbitrary Correlatiular constant magnetic field of strength . and a random potential .. The probability distribution of . is assumed to be Gaussian with . (2) Here the overbar denotes the average with respect to the probability distribution, σ is the strength and λ the correlation length of the fluctuations of the potential.

Conducive 发表于 2025-3-31 10:08:44

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骚扰 发表于 2025-3-31 15:34:20

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粗俗人 发表于 2025-3-31 17:53:00

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查看完整版本: Titlebook: High Magnetic Fields in Semiconductor Physics III; Quantum Hall Effect, Gottfried Landwehr Conference proceedings 1992 Springer-Verlag Berl