鸵鸟
发表于 2025-4-1 03:22:03
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infelicitous
发表于 2025-4-1 09:16:16
S. Andrieu,F. Arnaud d’Avitaya,J. C. PfisterPalette der keramischen Werkstoffe besonders in den letzten Jahrhunderten seit der Entdeckung des europäischen Porzellans und den letzten Jahrzehnten erheblich erweitert und hat auch oxidische und nichtoxidische Materialien einbezogen. Sie umfaßt heute eine Breite, die über die bis vor wenigen Jahrz
正论
发表于 2025-4-1 10:52:19
MBE Growth of GaAs and III–V Quantum Wells on Sioperties in combination with the well established silicon device technology. The problems inherent in this heteroepitaxy have now been well documented in the literature and are related mainly to the large lattice mismatch between the materials and the polar-nonpolar nature of the interface. The resu
四目在模仿
发表于 2025-4-1 15:29:05
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PACT
发表于 2025-4-1 21:42:26
Embedded Molecular Beam Epitaxy for a Coplanar Gallium-Arsenide on Silicon Technologyf GaAs with the well established high density silicon technology. Devices with performances comparable to those of their GaAs on GaAs counterparts are frequently reported (.). Although the high density of threading dislocations together with the remaining stress in the device layers are limiting fac
整洁
发表于 2025-4-2 02:27:39
Suppression of Defect Propagation in Heteroepitaxial Structures by Strained Layer Superlatticestion by strained layer superlattices was found. The mechanisms of defect reduction were suggested based on Burgers vector analysis. It was shown that additional threading dislocations can glide into the epilayer during cooling process and that misfit dislocations at the interface can be forced to di