JOLT
发表于 2025-3-21 18:52:14
书目名称Handbook of Porous Silicon影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0421958<br><br> <br><br>书目名称Handbook of Porous Silicon影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0421958<br><br> <br><br>书目名称Handbook of Porous Silicon网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0421958<br><br> <br><br>书目名称Handbook of Porous Silicon网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0421958<br><br> <br><br>书目名称Handbook of Porous Silicon被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0421958<br><br> <br><br>书目名称Handbook of Porous Silicon被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0421958<br><br> <br><br>书目名称Handbook of Porous Silicon年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0421958<br><br> <br><br>书目名称Handbook of Porous Silicon年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0421958<br><br> <br><br>书目名称Handbook of Porous Silicon读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0421958<br><br> <br><br>书目名称Handbook of Porous Silicon读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0421958<br><br> <br><br>
AND
发表于 2025-3-21 23:17:14
Porous Silicon Formation by Anodizationr types, wafer cell design, post-anodization handling requirements (rinsing/drying/storage), parameters affecting layer uniformity, the use of nonaqueous electrolytes and electrolyte additives (surfactants, oxidizers, and other types), methods for tuning porosity, process control and natural variabi
vascular
发表于 2025-3-22 01:22:29
Porous Silicon Formation by Metal Nanoparticle-Assisted Etchingep or 2-step method are described as well as mechanism of metal-assisted chemical etching. Influence of various parameters such as nature of metal, temperature, etching solution composition, intrinsic properties of silicon substrate on the morphology of porous silicon, or nanostructures is discussed
justify
发表于 2025-3-22 06:43:37
Porous Silicon Formation by Photoetchingtrolytes is reviewed. The benefits of using an incoherent light source and specific oxidizing agents are highlighted. The technique is particularly useful for creating thin porous regions in .-type Si wafers, SOI wafers, micromachined wafers, or those that contain electronic circuitry.
确保
发表于 2025-3-22 09:10:02
Porous Silicon Formation by HNO3/HF Vapor EtchingS layers (PSLs) and/or a thick white layer identified as the (NH.).SiF. compound. Which phase dominates depends on the HNO./HF volume ratio. High-resolution SEM observations show that p- and p.-type PSLs are composed of dot-like crystalline Si particles embedded in an amorphous phase, having sizes n
Oversee
发表于 2025-3-22 14:22:29
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Explosive
发表于 2025-3-22 20:28:21
Porous Silicon Formation by Mechanical Meansr single crystalline silicon wafers, highly dispersed and nanocrystalline silicon powders are produced. Pressing and sintering then lead to a porous matrix. The macroporous structures made in this way can then be permeated by meso- and micropores. The sinters have isotropic character of the pore dis
anthesis
发表于 2025-3-22 21:32:52
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施加
发表于 2025-3-23 02:46:04
Mesoporous Siliconion can hardly be accessed directly but can be deduced by studying the complementary pore space surrounding this skeleton. By profiting from the potentials of nuclear magnetic resonance cryoporometry to probe fine details of the pore structure in mesoporous silicon, the results of systematic studies
小卷发
发表于 2025-3-23 08:17:56
Microporous Siliconsurface area (540–840 m./g) porous silicon structures with high micropore content have now been demonstrated by wafer anodization in very concentrated hydrofluoric acid, metal-assisted stain etching, galvanic etching, and silica reduction. The smallest electrochemically generated pores to date are p