热情赞扬 发表于 2025-3-30 11:48:07
http://reply.papertrans.cn/43/4215/421466/421466_51.pngPolydipsia 发表于 2025-3-30 15:18:00
II-VI Semiconductor-Based Unipolar Barrier Structures for Infrared Photodetector Arrays 3–5 μm) and long wave (LWIR, 8–14 μm) regions of the infrared (IR) range. Today, there is an urgent need to develop MWIR and LWIR array photodetectors of the third generation, which are subject to increased requirements for photosensitive elements, in particular, for operating temperatures, weight,商议 发表于 2025-3-30 19:44:34
Infrared Sensing Using Mercury Chalcogenide Nanocrystals NC film conductivity and then describes the structure, operation and performance of photoconductors, phototransistors and photodiodes made with NCs. In each case, we attempt to highlight the current best performing devices. Finally, we address three emerging directions for research: light-matter co