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Electronic Transport Properties of XO (X = Fe, Cu, Eu, Mg) Monowire-Based Molecular Device: A First-ed between the gold (Au) electrodes are probed using density functional theory (DFT) with nonequilibrium Green’s functions formalism. The state of the art of this work is to study the electronic properties of XO (X = Fe, Cu, Eu, and Mg) monowire in terms of the device density of states, transmissionCAGE 发表于 2025-3-27 10:44:16
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Magnetic Logic and Magnetic Computing Spin-Based Devicesof the key discoveries that led to the development of spintronics was the observation of spin-polarized electron injection from a ferromagnetic metal to a normal metal by Johnson and Silsbee in 1985 . This effect, known as spin injection, involves the transfer of electrons from a ferromagnetic maNeuralgia 发表于 2025-3-28 00:37:38
Introduction to Latest Fabrication Techniquesctor industry. In this first chapter, the eight major semiconductor processes will be comprehensively covered for understanding the recent semiconductor technology. Therefore, this chapter will briefly introduce eight major semiconductor fabrication processes – wafer manufacturing, oxidation, photolCODA 发表于 2025-3-28 03:38:22
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Thin Film Analysis After Oxidationoxidation-formation methods, this chapter will help the readers understand the different characteristics of the SiO. layer. According to how the SiO. layer is made (anodization, sputtering, TEOS CVD, CO. CVD, and thermal oxidation), its characteristics and density will vary a lot. In essence, this c