Pander
发表于 2025-3-25 06:17:41
https://doi.org/10.1057/9781137330024The corresponding room temperature values of the tunnel magnetoresistance are 33% and 41%, respectively. Structural and magnetic properties of the Co.MnSi AlO. – barrier interface have been studied with X-ray diffraction, electron and X-ray absorption spectroscopy and X-ray magnetic circular dichroi
Pigeon
发表于 2025-3-25 10:18:35
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镇压
发表于 2025-3-25 13:58:26
The New Woman in Fiction and Facter with the magnetic properties of the epitaxial film. The morphological structure and the magnetic properties change sensitively depending on the substrate temperature during the growth. The room-temperature saturation magnetization of the film grown under optimum conditions reaches about 3 μB per
Catheter
发表于 2025-3-25 17:29:05
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keloid
发表于 2025-3-25 20:09:11
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conflate
发表于 2025-3-26 01:37:37
Growth and Magnetotransport Properties of Thin Co2MnGe Layered Structures,eir complicated band structure for these p-type conductors. The main challenges for achieving an enhanced GMR effect in Heusler ML structures are discussed on the basis of our room temperature magneto-transport measurements and theoretical modelling results.
LUMEN
发表于 2025-3-26 05:34:13
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Mhc-Molecule
发表于 2025-3-26 10:17:51
Half-Metallic Ferromagnetism and Stability of Transition Metal Pnictides and Chalcogenides,ferromagnetism is also found in wurtzite transition metal pnictides and chalcogenides and in transition-metal doped semiconductors as well as deformed structures. Some of these half-metallic materials could be grown epitaxially in the form of ultrathin .lms or layers suitable for real spintronic app
个人长篇演说
发表于 2025-3-26 12:37:35
Materials Design and Molecular-Beam Epitaxy of Half-Metallic Zinc-Blende CrAs and the Heterostructuer with the magnetic properties of the epitaxial film. The morphological structure and the magnetic properties change sensitively depending on the substrate temperature during the growth. The room-temperature saturation magnetization of the film grown under optimum conditions reaches about 3 μB per
愤慨点吧
发表于 2025-3-26 18:50:47
https://doi.org/10.1007/978-1-349-08535-4lectronic and magnetic properties of both Heusler families; the so-called half-Heusler alloys like NiMnSb and the the full-Heusler alloys like Co.MnGe. Based on . results we discuss the origin of the gap which is fundamental for the understanding of their electronic and magnetic properties. We show