glomeruli 发表于 2025-3-23 10:34:22

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gregarious 发表于 2025-3-23 15:36:48

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insomnia 发表于 2025-3-23 20:21:02

,Siliziumkarbid, Eigenschaften und Anwendung als Material für spannungsabhängige Widerstände,and a metal probe, between pieces of silicon carbide and resistance of arrays of contacts (silicon carbide grain pressed between metal plates or bonded discs with metal sprayed faces). Survey of experimental results (voltage-current characteristic, rectification effect) and theoretical interpretatio

AGGER 发表于 2025-3-23 23:48:36

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衰老 发表于 2025-3-24 03:40:04

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fallible 发表于 2025-3-24 08:08:43

,Die Eigenschaften der Oberfläche von Germanium und Silizium,lowing chapters, the physical properties of surfaces are, under simplified conditions, treated quantitatively, and, as far as possible, illustrated by experimental examples. In § 7, the occupation of surface terms under thermal equilibrium as a function of density and energy level is derived, and wo

Parallel 发表于 2025-3-24 13:07:38

,Ioneschwingungsprobleme bei Übergängen lokalisierter Elektronen in, Halbleitern, of attack is explained (method of Slater Sums, .) and comment is given on some recent work. Then more detailed features of the process of such a transition are discussed on the basis of the same simplified model as used above in treating radiative transitions.

LUCY 发表于 2025-3-24 17:31:26

https://doi.org/10.1007/978-1-349-20391-8theory of strong liquid electrolytes), it is shown that a combination of both will approximate best the real equilibrium of interacting defects in ionic crystals and semiconductors, an exact description lacking until now for higher than “infinitely small” concentrations of defects. This combined the

Aerophagia 发表于 2025-3-24 20:21:49

https://doi.org/10.1007/978-1-349-21913-1lowing chapters, the physical properties of surfaces are, under simplified conditions, treated quantitatively, and, as far as possible, illustrated by experimental examples. In § 7, the occupation of surface terms under thermal equilibrium as a function of density and energy level is derived, and wo

伟大 发表于 2025-3-24 23:30:43

Emile Aarts,Hein Fleuren,Ton Wilthagen of attack is explained (method of Slater Sums, .) and comment is given on some recent work. Then more detailed features of the process of such a transition are discussed on the basis of the same simplified model as used above in treating radiative transitions.
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查看完整版本: Titlebook: Halbleiterprobleme; In Referaten des Hal W. Schottky Book 1956 Springer Fachmedien Wiesbaden 1956 Halbleiter