Leaven
发表于 2025-3-30 11:54:34
http://reply.papertrans.cn/39/3892/389139/389139_51.png
Fallibility
发表于 2025-3-30 12:53:12
http://reply.papertrans.cn/39/3892/389139/389139_52.png
SPECT
发表于 2025-3-30 17:21:50
http://reply.papertrans.cn/39/3892/389139/389139_53.png
fetter
发表于 2025-3-30 22:11:47
Growth of Polycrystalline Germanium Films on Insulating Substrateshe condensed phase is formed primarily from these. The adhesion energy determines its distribution on the substrate. If the surface energy of the precipitated substance exceeds the energy of its bond to the substrate, then the condensate accumulates into three-dimensional island aggregates .
纤细
发表于 2025-3-31 02:15:02
Explosive Crystallization of Amorphous Substances with Fixed Crystallitesi.e., it is a first-order phase transition. However, it occurs far from conditions of phase equilibrium and includes mechanisms of crystal generation and growth. The kinetics of such a transformation have features in common with other cases of metastable phase decomposition and can be analyzed on the basis of the approach formulated by Volmer .
Ablation
发表于 2025-3-31 07:50:46
Growth Rate Problems of KDP Type Single Crystals the crystals grown from solution are the best available with respect to maximal dimension with retention of the required optical quality. This holds for a number of single crystals having physical properties suitable for use in laser technology.
Antagonism
发表于 2025-3-31 11:15:20
http://reply.papertrans.cn/39/3892/389139/389139_57.png
灰心丧气
发表于 2025-3-31 17:13:15
Conflict Resolution under the First Bourbonsn of the amorphous solution at which the amorphous phase still does not lose its stability; and what crystalline phase separates first in the course of the solid-state reactions. Analogous questions are posed during investigation of solid-state reactions in multilayered crystalline systems .
VERT
发表于 2025-3-31 17:46:20
https://doi.org/10.1007/978-1-349-17962-6uration). In certain studies, the procedure described involves an artificial leveling of the concentration inhomogeneity at the crystal—solution interface that accompanies dissolution and growth of a crystal. In particular, the leveling is achieved by forced stirring of the solution surrounding the crystal.
Tempor
发表于 2025-4-1 00:18:04
Melting and Crystallization of Semiconductors Using Pulsed Lasersmethods and procedures of laser treatment of semiconductors for practical purposes continues. Recently, dynamic processes have increasingly been studied by such structurally sensitive methods as synchrotron radiation with nanosecond time resolution, electron diffraction with picosecond resolution, and several others.