digestive-tract
发表于 2025-3-21 19:56:39
书目名称Growth of Crystals影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0389134<br><br> <br><br>书目名称Growth of Crystals影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0389134<br><br> <br><br>书目名称Growth of Crystals网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0389134<br><br> <br><br>书目名称Growth of Crystals网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0389134<br><br> <br><br>书目名称Growth of Crystals被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0389134<br><br> <br><br>书目名称Growth of Crystals被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0389134<br><br> <br><br>书目名称Growth of Crystals年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0389134<br><br> <br><br>书目名称Growth of Crystals年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0389134<br><br> <br><br>书目名称Growth of Crystals读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0389134<br><br> <br><br>书目名称Growth of Crystals读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0389134<br><br> <br><br>
背叛者
发表于 2025-3-21 22:28:46
Growth Surface as a Vacancy Generator in Vacuum Condensationt clearly evident during diffusional mass transfer occurring with the help of directional vacancy fluxes. In this instance, the transfer kinetics are determined by the presence and vigor of vacancy sources and sinks. It is known that structural defects of the crystals and mainly kinks in the surface
表被动
发表于 2025-3-22 02:43:53
Use of Photostimulated Vaporization During Growth of A2B5, A2B6, and A4B6 Filmsg irradiation by light with wavelengths in the range 0.25–1.2μ m increase several times compared with equivalent epitaxial processes and that the substrate surface is effectively cleaned and partially recrystallized before the growth.
glacial
发表于 2025-3-22 05:25:51
Growth of Bulk Silicon Carbide Single Crystalsals by spontaneous crystallization from the vapor at 2550–2600 ¼ was reported. During these years, numerous attempts have been made to perfect the method by optimizing the thermal fields in the growth zone and controlling crystal nucleation by adding perforated graphite crystallization inserts and s
形状
发表于 2025-3-22 09:28:36
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Indent
发表于 2025-3-22 16:32:53
Local Shaping and Growth from the Melt of Intricate Sapphire Articles on “Crystallization Center” Equbstantially changed as the crystal is pulled from the melt since the base of the melt column caught between the crystallization front and the shaper reproduces the geometry of the shaper edge. The size of the transverse cross section can be changed only within narrow limits, usually less than fract
Indent
发表于 2025-3-22 17:14:09
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FLAG
发表于 2025-3-22 22:34:10
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Keshan-disease
发表于 2025-3-23 03:52:49
Flux Growth and Properties of Oxide Crystalss the most universal method and enables crystals to be prepared from compounds melting with decomposition, experiencing reconstructive phase transitions at extremely high temperatures, etc. Other methods of growing these crystals are not always feasible. Secondly, the flux method is most interesting
新手
发表于 2025-3-23 08:45:14
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