弄皱
发表于 2025-3-25 03:38:17
Richard M. Stephenson,Stanislaw Malanowskis or straps. Magnetic elements were arrayed so that only those which were to be written to received a combination of magnetic fields above a write threshold, while the other elements in the array did not change storage state. Most of today’s MRAM concepts still use this technique.
制度
发表于 2025-3-25 10:47:52
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PANT
发表于 2025-3-25 12:38:17
Sandra L. Baldauf,Joan E. StrassmannGMR and TMR devices have a basic common structure, namely, two ferromagnetic metal films separated magnetically by a nonmagnetic film. The difference between the structures of these devices is in the nonmagnetic spacer film which consists of a metal film (GMR) or an insulator film (TMR).
Sputum
发表于 2025-3-25 19:17:38
Physics of GMR and TMR Devices,GMR and TMR devices have a basic common structure, namely, two ferromagnetic metal films separated magnetically by a nonmagnetic film. The difference between the structures of these devices is in the nonmagnetic spacer film which consists of a metal film (GMR) or an insulator film (TMR).
terazosin
发表于 2025-3-25 21:20:59
Michael Massengale,Elise Choe,Don E. Davison of the spin-valves to magnetic read heads. MR properties of two types of spin-valves, exchange-biased spin valves having an antiferromagnetic pinning layer and pseudo-spin-valves having a hard magnetic layer, are discussed in this section.
招致
发表于 2025-3-26 03:13:23
Richard M. Stephenson,Stanislaw Malanowskis or straps. Magnetic elements were arrayed so that only those which were to be written to received a combination of magnetic fields above a write threshold, while the other elements in the array did not change storage state. Most of today’s MRAM concepts still use this technique.
怎样才咆哮
发表于 2025-3-26 06:17:59
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Cupidity
发表于 2025-3-26 12:27:27
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系列
发表于 2025-3-26 13:05:06
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figure
发表于 2025-3-26 18:42:36
Giant Magneto-Resistance Devices978-3-662-04777-4Series ISSN 0931-5195 Series E-ISSN 2198-4743