Ergots 发表于 2025-3-23 12:51:50

Agile in der Unternehmenspraxisostructures with β-(Al.Ga.).O. have been used for modulation doped field effect transistors; however, thermodynamic limitations of maximum achievable Al content have limited device performance. Expanding the growth regime through metal-oxide catalyzed epitaxy using In could help improve heterostructure growth for future devices.

报复 发表于 2025-3-23 16:15:25

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SLUMP 发表于 2025-3-23 19:19:45

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Moderate 发表于 2025-3-23 23:30:45

Metal Organic Chemical Vapor Deposition 2scussed. Doping of MOCVD-grown .-Ga.O.is also briefly reviewed, where Si and Sn are the most commonly used dopants. Doping concentrations between . and . cm. have been achieved, with corresponding electron mobility values between .130 and 50 cm./Vs.

MAIZE 发表于 2025-3-24 05:19:39

Low Pressure Chemical Vapor Depositioniscussed. LPCVD growth of β-Ga.O. rod structures on 3C-SiC substrates is also discussed. From the crystal structural characterization and electron transport measurements, LPCVD-grown β-Ga.O. materials exhibit high quality with great promises for high power electronic and short-wavelength optoelectronic device applications.

甜得发腻 发表于 2025-3-24 10:33:11

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extinct 发表于 2025-3-24 12:57:02

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deceive 发表于 2025-3-24 16:46:19

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减至最低 发表于 2025-3-24 19:46:02

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Stricture 发表于 2025-3-25 02:54:49

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查看完整版本: Titlebook: Gallium Oxide; Materials Properties Masataka Higashiwaki,Shizuo Fujita Book 2020 Springer Nature Switzerland AG 2020 Ga2O3.transparent cond