Ergots
发表于 2025-3-23 12:51:50
Agile in der Unternehmenspraxisostructures with β-(Al.Ga.).O. have been used for modulation doped field effect transistors; however, thermodynamic limitations of maximum achievable Al content have limited device performance. Expanding the growth regime through metal-oxide catalyzed epitaxy using In could help improve heterostructure growth for future devices.
报复
发表于 2025-3-23 16:15:25
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SLUMP
发表于 2025-3-23 19:19:45
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Moderate
发表于 2025-3-23 23:30:45
Metal Organic Chemical Vapor Deposition 2scussed. Doping of MOCVD-grown .-Ga.O.is also briefly reviewed, where Si and Sn are the most commonly used dopants. Doping concentrations between . and . cm. have been achieved, with corresponding electron mobility values between .130 and 50 cm./Vs.
MAIZE
发表于 2025-3-24 05:19:39
Low Pressure Chemical Vapor Depositioniscussed. LPCVD growth of β-Ga.O. rod structures on 3C-SiC substrates is also discussed. From the crystal structural characterization and electron transport measurements, LPCVD-grown β-Ga.O. materials exhibit high quality with great promises for high power electronic and short-wavelength optoelectronic device applications.
甜得发腻
发表于 2025-3-24 10:33:11
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extinct
发表于 2025-3-24 12:57:02
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deceive
发表于 2025-3-24 16:46:19
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减至最低
发表于 2025-3-24 19:46:02
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Stricture
发表于 2025-3-25 02:54:49
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