Washington 发表于 2025-3-21 17:22:23
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Recent Advances in High-Voltage GaN MOS-Gated Transistors for Power Electronics Applications,治愈 发表于 2025-3-22 02:14:00
http://reply.papertrans.cn/39/3803/380202/380202_3.pngcommodity 发表于 2025-3-22 06:29:34
http://reply.papertrans.cn/39/3803/380202/380202_4.png储备 发表于 2025-3-22 12:26:13
Conduction in Degenerately Doped Zn,Al,O Thin Films,果核 发表于 2025-3-22 16:56:04
0933-033X vices.Comprehensive reviews of GaN nanostructures.Also coverThe AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency mi果核 发表于 2025-3-22 20:07:57
Book 2012years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recentprogress.uncertain 发表于 2025-3-22 22:54:08
0933-033X crowave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recentprogress.978-3-642-43323-8978-3-642-23521-4Series ISSN 0933-033X Series E-ISSN 2196-2812敲竹杠 发表于 2025-3-23 03:58:51
Book 2012years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recentprogress.flamboyant 发表于 2025-3-23 07:26:54
Stephen PeartonMost up-to-date book on the market covering recent advances in UV LEDs,nitride alloys for solar cell applications and GaN power switching devices.Comprehensive reviews of GaN nanostructures.Also cover