Goiter
发表于 2025-3-21 18:24:02
书目名称GaN and SiC Power Devices影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0380201<br><br> <br><br>书目名称GaN and SiC Power Devices影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0380201<br><br> <br><br>书目名称GaN and SiC Power Devices网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0380201<br><br> <br><br>书目名称GaN and SiC Power Devices网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0380201<br><br> <br><br>书目名称GaN and SiC Power Devices被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0380201<br><br> <br><br>书目名称GaN and SiC Power Devices被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0380201<br><br> <br><br>书目名称GaN and SiC Power Devices年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0380201<br><br> <br><br>书目名称GaN and SiC Power Devices年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0380201<br><br> <br><br>书目名称GaN and SiC Power Devices读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0380201<br><br> <br><br>书目名称GaN and SiC Power Devices读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0380201<br><br> <br><br>
Habituate
发表于 2025-3-21 23:57:53
GaN and SiC Power Devices978-3-031-50654-3Series ISSN 2690-0300 Series E-ISSN 2690-0327
neurologist
发表于 2025-3-22 01:24:05
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有效
发表于 2025-3-22 06:50:15
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Ondines-curse
发表于 2025-3-22 08:52:14
Tumors and Tumor-Like Lesions of BoneIn this chapter, we will thoroughly examine the key attributes of power devices based on Gallium Nitride (GaN). Our focus will encompass an in-depth exploration of their electrical characteristics and driving mechanisms. Additionally, we will provide a comprehensive analysis of the manufacturing processes involved in the production of GaN devices.
天气
发表于 2025-3-22 13:51:44
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天气
发表于 2025-3-22 20:43:44
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诱惑
发表于 2025-3-22 22:29:16
Power Electronics Processing,Several notable applications of power electronics may be discussed alongside the fundamental principle of power processing. Power electronics is the technology that processes and manages the flow of electric power by varying and providing voltage and current in an optimal manner for the load and the end user.
闪光东本
发表于 2025-3-23 03:38:06
Gallium Nitride,Gallium Nitride (GaN) is a wide-bandgap semiconductor material that has gained significant attention in recent years due to its exceptional properties and wide-ranging applications in electronics, optoelectronics, and power devices.
多样
发表于 2025-3-23 05:45:57
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