GLOAT 发表于 2025-3-21 16:43:04

书目名称Ferroelectric-Gate Field Effect Transistor Memories影响因子(影响力)<br>        http://impactfactor.cn/2024/if/?ISSN=BK0342104<br><br>        <br><br>书目名称Ferroelectric-Gate Field Effect Transistor Memories影响因子(影响力)学科排名<br>        http://impactfactor.cn/2024/ifr/?ISSN=BK0342104<br><br>        <br><br>书目名称Ferroelectric-Gate Field Effect Transistor Memories网络公开度<br>        http://impactfactor.cn/2024/at/?ISSN=BK0342104<br><br>        <br><br>书目名称Ferroelectric-Gate Field Effect Transistor Memories网络公开度学科排名<br>        http://impactfactor.cn/2024/atr/?ISSN=BK0342104<br><br>        <br><br>书目名称Ferroelectric-Gate Field Effect Transistor Memories被引频次<br>        http://impactfactor.cn/2024/tc/?ISSN=BK0342104<br><br>        <br><br>书目名称Ferroelectric-Gate Field Effect Transistor Memories被引频次学科排名<br>        http://impactfactor.cn/2024/tcr/?ISSN=BK0342104<br><br>        <br><br>书目名称Ferroelectric-Gate Field Effect Transistor Memories年度引用<br>        http://impactfactor.cn/2024/ii/?ISSN=BK0342104<br><br>        <br><br>书目名称Ferroelectric-Gate Field Effect Transistor Memories年度引用学科排名<br>        http://impactfactor.cn/2024/iir/?ISSN=BK0342104<br><br>        <br><br>书目名称Ferroelectric-Gate Field Effect Transistor Memories读者反馈<br>        http://impactfactor.cn/2024/5y/?ISSN=BK0342104<br><br>        <br><br>书目名称Ferroelectric-Gate Field Effect Transistor Memories读者反馈学科排名<br>        http://impactfactor.cn/2024/5yr/?ISSN=BK0342104<br><br>        <br><br>

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查看完整版本: Titlebook: Ferroelectric-Gate Field Effect Transistor Memories; Device Physics and A Byung-Eun Park,Hiroshi Ishiwara,Sung-Min Yoon Book 2020Latest edi