mercenary
发表于 2025-3-25 05:04:53
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咯咯笑
发表于 2025-3-25 11:23:50
The Metastatic Process: An Overview,tivities of the metal and the semiconductor. The respective slope parameters and the branch-point energies thus determine the . barrier heights. In this chapter, the calculated values of these quantities are discussed.
dilute
发表于 2025-3-25 14:17:16
https://doi.org/10.1007/978-3-319-23621-6structures at semiconductor interfaces is caused by defects cannot simply be drawn from this correlation. It ultimately proved to be false, as no experimental evidence for the existence of interface-induced defects was found.
PHIL
发表于 2025-3-25 19:36:02
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MELD
发表于 2025-3-25 20:20:49
From the , Rule to Interface-Induced Gap States,ticular, the observation of the adatom-induced shifts in core levels of the semiconductors shows that the interface dipole can be described by the difference in the electronegativities of metal and semiconductor.
事先无准备
发表于 2025-3-26 03:47:24
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Adenoma
发表于 2025-3-26 07:53:28
Irradiation- or Native-Defect-Induced Gap States,structures at semiconductor interfaces is caused by defects cannot simply be drawn from this correlation. It ultimately proved to be false, as no experimental evidence for the existence of interface-induced defects was found.
改正
发表于 2025-3-26 11:30:23
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Geyser
发表于 2025-3-26 12:55:17
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diabetes
发表于 2025-3-26 20:17:38
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