表状态 发表于 2025-3-25 03:22:22
http://reply.papertrans.cn/32/3187/318632/318632_21.pngmorale 发表于 2025-3-25 08:15:18
George J. Suci,Steven S. Robertsonace of metals and semiconductors, as well as the influence of foreign adsorbed materials on the transfer, is included under the following themes in this section: involvement in surface chemistry technology, classification of electron emission and the work function, exoemission phenomena of processed举止粗野的人 发表于 2025-3-25 15:37:07
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Marina Bar-Shai M.D., Ph.D.,Ehud Klein M.D.lectron capture centers or factors that influence the intensity of EE. The oxide film on metals also facilitates EE from the surface. Metals used in this context include Al, Mg, Ni, Sn, Fe, and Cu. We describe the effects of the oxide-film thickness, gas adsorption, temperature, light irradiation, anotion 发表于 2025-3-25 21:57:12
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http://reply.papertrans.cn/32/3187/318632/318632_26.pngcatagen 发表于 2025-3-26 05:57:58
http://reply.papertrans.cn/32/3187/318632/318632_27.pngDirected 发表于 2025-3-26 09:22:48
http://reply.papertrans.cn/32/3187/318632/318632_28.pnghomeostasis 发表于 2025-3-26 15:50:58
https://doi.org/10.1007/978-3-031-46448-5be TAPE of Si wafers obtained under temperature scans and incident light wavelength scans. We also report the characteristics (activation energy, photothreshold, and total counts of emitted electrons) of Si samples with an oxide layer and Si samples implanted with H, Si, and Ar ions.征服 发表于 2025-3-26 17:17:33
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