迷住
发表于 2025-3-23 10:13:17
https://doi.org/10.1007/978-3-540-72724-8 describing the band lineup of heterostructures are introduced and the effect of interface stoichiometry is illustrated. The characteristic scale for the occurrence of size quantization is discussed, and electronic states in quantum wells, quantum wires, and quantum dots are described.
剥皮
发表于 2025-3-23 16:00:51
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brassy
发表于 2025-3-23 19:11:00
https://doi.org/10.1007/978-3-658-08120-1um-near LPE process is illustrated for different cooling procedures. For the growth employing MOVPE we consider properties of source precursors and processes of mass transport. The section on MBE concentrates particularly on vacuum requirements, the effusion of beam sources, and the uniformity of deposition.
comely
发表于 2025-3-23 22:16:26
Structural Properties of Heterostructures, layer thickness is introduced, and dislocations relieving the strain in epitaxial layers are presented. X-ray diffraction—the standard tool for structural characterization—is outlined at the end of the chapter.
gustation
发表于 2025-3-24 04:23:15
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Trigger-Point
发表于 2025-3-24 07:30:44
Doping, Diffusion, and Contacts,stability of atoms against a change of lattice site. We briefly consider fundamentals of diffusion and discuss some basic mechanisms governing the diffusivity of atoms in a crystal. The chapter concludes with concepts for ohmic metal-semiconductor contacts.
blister
发表于 2025-3-24 13:17:26
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CHIP
发表于 2025-3-24 15:32:44
https://doi.org/10.1007/978-3-658-20391-7chieved by technical improvements of the growth techniques, namely liquid phase epitaxy in the early, and molecular beam epitaxy and metalorganic vapor phase epitaxy in the late 1960ies. Current tasks for epitaxial growth are often motivated by needs for the fabrication of advanced devices, aiming to control carriers and photons.
COW
发表于 2025-3-24 20:57:54
Introduction,chieved by technical improvements of the growth techniques, namely liquid phase epitaxy in the early, and molecular beam epitaxy and metalorganic vapor phase epitaxy in the late 1960ies. Current tasks for epitaxial growth are often motivated by needs for the fabrication of advanced devices, aiming to control carriers and photons.
假设
发表于 2025-3-25 01:59:15
1868-4513 it from elementary introductions to theory and practice of epitaxial growth, supported by pertinent references and over 200 detailed illustrations.978-3-642-32970-8Series ISSN 1868-4513 Series E-ISSN 1868-4521