编辑才信任 发表于 2025-3-26 22:30:41
Further Developments in IDIS Model,m: metal/semiconductor interfaces. Its technological importance led to an extensive research and nowadays, the properties of interfaces between metal and inorganic semiconductors are well understood (band bending, interface states, Bardeen model, IDIS model...). A small review of inorganic interface物质 发表于 2025-3-27 02:21:38
http://reply.papertrans.cn/32/3104/310316/310316_32.pngNATTY 发表于 2025-3-27 08:19:53
Results for Various Interfaces: C (_{60}) , Benzene, TTF, TCNQ and Pentacene over Au(111),S model we can correct the underestimation of the LDA gap and get a realistic value for an organic molecule over a metal surface, where both the SIC and the image potential contribute to the size of the gap. We have also employed all these ideas for two systems of technological and scientific intere指派 发表于 2025-3-27 11:45:42
General Conclusions and Future Work,anic electronic devices); and molecules between metal electrodes (like the ones present molecular electronic devices) have been analyzed using DFT (and introducing the appropriate corrections). For these systems it is very important to have correctly characterized the electron and hole injection bar讨厌 发表于 2025-3-27 16:29:00
Gianluca Lo Coco,Salvatore Gullo,Claudia Prestano,Gary M. Burlingamero-ofs are referred to in the literature. Thus, the manuscriptshould prove useful not only to mathematicians and theoreti-cal scientists with expertise in parti978-3-540-54339-8978-3-540-47564-4Series ISSN 0170-8643 Series E-ISSN 1610-7411祖先 发表于 2025-3-27 20:48:12
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Mustafa M. AralProvides a comprehensive source for advancements/contributions made in environmental transformation, transport modeling and the associated health risk assessment topics Includes free downloadable appl