滋养
发表于 2025-3-23 10:18:22
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帽子
发表于 2025-3-23 14:16:04
,Terahertz Emission Mechanisms in III–V Semiconductors: The Influence of Isoelectronic Dopants, have shown interesting properties like giant bandgap bowing, (e.g., 80–90 meV/% of Bi in GaAsBi), increase in hole concentration, and giant spin-orbit bowing. In this chapter, we discuss the effect of Bi incorporation on the THz emission and the mechanisms responsible for THz phenomena in two typic
medium
发表于 2025-3-23 20:56:05
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mechanical
发表于 2025-3-24 01:12:37
,Terahertz Radiators Based on Silicon Carbide Avalanche Transit Time Sources—Part I: Large-Signal Chond IMPATT source is a better option for RF power generation at 94 GHz due to its better power generation capability at lower mm-wave frequencies. However, IMPATT sources based on both 3C-SiC and diamond are much powerful in comparison with mm-wave and THz IMPATT sources based on Si.
Recess
发表于 2025-3-24 03:39:40
dealing with THz technology.Includes advanced topics such a.This book highlights recent advances and applications in terahertz (THz) technology, addressing advanced topics such as THz biomedical imaging, pattern recognition and tomographic reconstruction for THz biomedical imaging by machine learni
FOLLY
发表于 2025-3-24 10:35:42
https://doi.org/10.1007/978-3-031-48777-4conductor-based IMPATT sources possess significantly poor noise performance than the conventional Si-based IMPATT sources. However, significantly better RF power delivery capability of WBG IMPATT sources makes them superior than Si IMPATTs for mm-wave and THz applications.
maculated
发表于 2025-3-24 11:12:07
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使增至最大
发表于 2025-3-24 16:34:47
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esoteric
发表于 2025-3-24 19:12:49
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制造
发表于 2025-3-24 23:40:43
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