渐变
发表于 2025-3-25 05:45:41
Review of the Science and Technology for Low- and High-Density Nonvolatile Ferroelectric Memoriesemories (FeRAM) . The research performed during the last two decades focused on developing both the scientific and technological bases of ferroelectric films and layered heterostructures and their integration into ever evolving device architectures and the development of new device architectures for high-performance FeRAMs .
碎石
发表于 2025-3-25 09:24:56
Book 2014ill find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect
刀锋
发表于 2025-3-25 12:03:12
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Inveterate
发表于 2025-3-25 17:57:15
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mechanical
发表于 2025-3-25 21:09:36
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Sciatica
发表于 2025-3-26 01:44:56
Oxide Based Memristive Nanodevicesthe oxide films and dramatically change their conductance . Microscopically in a thin film device, the slight compositional change is in the embodiment of ionic motion, which gives rise to memristive switching under an electric field .
ROOF
发表于 2025-3-26 06:25:36
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卷发
发表于 2025-3-26 11:41:28
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使隔离
发表于 2025-3-26 15:10:21
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Obliterate
发表于 2025-3-26 20:42:04
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