恰当 发表于 2025-3-21 18:10:43
书目名称Emerging Memory Technologies影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0308308<br><br> <br><br>书目名称Emerging Memory Technologies影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0308308<br><br> <br><br>书目名称Emerging Memory Technologies网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0308308<br><br> <br><br>书目名称Emerging Memory Technologies网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0308308<br><br> <br><br>书目名称Emerging Memory Technologies被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0308308<br><br> <br><br>书目名称Emerging Memory Technologies被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0308308<br><br> <br><br>书目名称Emerging Memory Technologies年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0308308<br><br> <br><br>书目名称Emerging Memory Technologies年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0308308<br><br> <br><br>书目名称Emerging Memory Technologies读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0308308<br><br> <br><br>书目名称Emerging Memory Technologies读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0308308<br><br> <br><br>CHANT 发表于 2025-3-21 20:31:29
,Hizbullah’s Reconstruction of History,ising NVM for energy efficient computing because of its fast write speed and low-power operations. This chapter provides an overview of the circuit design technologies and applications of resistive memory devices for energy efficient systems, including resistive RAM (ReRAM), nonvolatile logic, and nonvolatile SRAM.Matrimony 发表于 2025-3-22 02:52:08
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Introduction: the History of This Book,“0” into an STT-RAM cell is very asymmetric in terms of performance, power, and reliability. In this chapter, we will review this asymmetry and analyze its sources. The impacts of this asymmetry on the STT-RAM cell optimization will be also discussed, followed by the introduction on a model to simulate the STT-RAM cell asymmetry.