BROOD
发表于 2025-3-21 19:04:24
书目名称Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0307896<br><br> <br><br>书目名称Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0307896<br><br> <br><br>书目名称Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0307896<br><br> <br><br>书目名称Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0307896<br><br> <br><br>书目名称Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0307896<br><br> <br><br>书目名称Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0307896<br><br> <br><br>书目名称Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0307896<br><br> <br><br>书目名称Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0307896<br><br> <br><br>书目名称Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0307896<br><br> <br><br>书目名称Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0307896<br><br> <br><br>
Debate
发表于 2025-3-21 21:46:19
Overview of Embedded Flash Memory Technology,First, various types of embedded flash-memory cells are briefly overviewed in terms of cell structure, operation principle, and features in terms of characteristics and reliability. Then presented are the basic circuit-design techniques required in embedded flash hard macros under different design c
间接
发表于 2025-3-22 02:28:33
Floating-Gate 1Tr-NOR eFlash Memory, The one-transistor cell has been by far the most adopted cell architecture in the world of flash NOR stand-alone memory. As an almost natural consequence, 1Tr-NOR architecture has also been considered the first, and for sure one of the best, solutions in embedded non-volatile memory (NVM) applicati
金哥占卜者
发表于 2025-3-22 08:13:48
,Split-Gate Floating Poly SuperFlash® Memory Technology, Design, and Reliability,icrocontrollers and smart cards. The majority of the large microcontroller and smartcard chip-makers and a series of fabless companies are now using some form of a split-gate embedded flash-memory technology because of its advantages in power, performance, and cost compared with traditional EEPROM o
Benzodiazepines
发表于 2025-3-22 09:05:43
SONOS 1Tr eFlash Memory,y-cell structure, basic cell-operation principles and fabrication process are described. Then basic array architecture and read/program/erase operations are explained with corresponding peripheral circuits. A disturb mode in program and erase operations is also discussed. Finally, advanced circuit t
Feigned
发表于 2025-3-22 16:29:08
http://reply.papertrans.cn/31/3079/307896/307896_6.png
Feigned
发表于 2025-3-22 17:35:10
http://reply.papertrans.cn/31/3079/307896/307896_7.png
借喻
发表于 2025-3-22 22:16:32
http://reply.papertrans.cn/31/3079/307896/307896_8.png
音乐学者
发表于 2025-3-23 03:30:35
http://reply.papertrans.cn/31/3079/307896/307896_9.png
set598
发表于 2025-3-23 09:27:46
Integrated Circuits and Systemshttp://image.papertrans.cn/e/image/307896.jpg