迁移
发表于 2025-3-23 11:02:08
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遵循的规范
发表于 2025-3-23 14:23:18
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Ordnance
发表于 2025-3-23 21:29:44
https://doi.org/10.1007/978-3-531-90940-0s of departure are possible, but experience gained so far in that connection is very limited; therefore, it is reasonable that attention should be confined to orbitals as the building blocks of many-electron states on which models are defined (through the corresponding Hamiltonian operators).
多节
发表于 2025-3-23 23:33:22
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MINT
发表于 2025-3-24 02:36:51
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cajole
发表于 2025-3-24 07:38:43
https://doi.org/10.1007/978-3-531-90940-0s of departure are possible, but experience gained so far in that connection is very limited; therefore, it is reasonable that attention should be confined to orbitals as the building blocks of many-electron states on which models are defined (through the corresponding Hamiltonian operators).
wreathe
发表于 2025-3-24 13:41:01
Mathematical Foundations,s of departure are possible, but experience gained so far in that connection is very limited; therefore, it is reasonable that attention should be confined to orbitals as the building blocks of many-electron states on which models are defined (through the corresponding Hamiltonian operators).
Gossamer
发表于 2025-3-24 17:05:52
The Basis Problem,al” (MVAO) basis. This corresponds to the idea that every first-row atom can lose or take up to eight electrons, either by forming an ion or by filling orbitals which result from combining each of the four orbitals with one or more orbitals of other atoms.
粗鲁性质
发表于 2025-3-24 21:08:36
C. Cranz,O. Poppenberg,O. von Eberhardmodels; then we shall give the SCF forms of the best known semiempirical schemes; we shall briefly consider the current . SCF models only with reference to the hidden semiempirical features associated with the choice of the basis and of the geometry.
Obsequious
发表于 2025-3-25 00:00:07
One-Electron Schemes,models; then we shall give the SCF forms of the best known semiempirical schemes; we shall briefly consider the current . SCF models only with reference to the hidden semiempirical features associated with the choice of the basis and of the geometry.