Radiofrequency 发表于 2025-3-21 17:19:31

书目名称Electronic Properties of Doped Semiconductors影响因子(影响力)<br>        http://figure.impactfactor.cn/if/?ISSN=BK0306373<br><br>        <br><br>书目名称Electronic Properties of Doped Semiconductors影响因子(影响力)学科排名<br>        http://figure.impactfactor.cn/ifr/?ISSN=BK0306373<br><br>        <br><br>书目名称Electronic Properties of Doped Semiconductors网络公开度<br>        http://figure.impactfactor.cn/at/?ISSN=BK0306373<br><br>        <br><br>书目名称Electronic Properties of Doped Semiconductors网络公开度学科排名<br>        http://figure.impactfactor.cn/atr/?ISSN=BK0306373<br><br>        <br><br>书目名称Electronic Properties of Doped Semiconductors被引频次<br>        http://figure.impactfactor.cn/tc/?ISSN=BK0306373<br><br>        <br><br>书目名称Electronic Properties of Doped Semiconductors被引频次学科排名<br>        http://figure.impactfactor.cn/tcr/?ISSN=BK0306373<br><br>        <br><br>书目名称Electronic Properties of Doped Semiconductors年度引用<br>        http://figure.impactfactor.cn/ii/?ISSN=BK0306373<br><br>        <br><br>书目名称Electronic Properties of Doped Semiconductors年度引用学科排名<br>        http://figure.impactfactor.cn/iir/?ISSN=BK0306373<br><br>        <br><br>书目名称Electronic Properties of Doped Semiconductors读者反馈<br>        http://figure.impactfactor.cn/5y/?ISSN=BK0306373<br><br>        <br><br>书目名称Electronic Properties of Doped Semiconductors读者反馈学科排名<br>        http://figure.impactfactor.cn/5yr/?ISSN=BK0306373<br><br>        <br><br>

aggrieve 发表于 2025-3-21 23:33:24

The Structure of the Impurity Band for Lightly Doped Semiconductors in general. A detailed investigation of the impurity band has been carried out recently by computer (Chap. 14). In the present chapter we formulate the problem (Sect. 3.4), and discuss its solutions in the limiting cases of low compensation (Sects. 3.2 and 3.3) and high compensation (Sect. 3.4).

Inelasticity 发表于 2025-3-22 03:39:18

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ASTER 发表于 2025-3-22 07:41:07

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知识 发表于 2025-3-22 09:28:08

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Subdue 发表于 2025-3-22 15:41:18

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Subdue 发表于 2025-3-22 18:53:46

Correlation Effects on the Density of States and Hopping Conductionates vanishes at the Fermi level. This has an important effect on the temperature dependence of hopping conduction, especially in the variablerange hopping region. The existence of correlation implies that the random resistor network model, which underlies the theory of hopping conduction desribed i

吹牛者 发表于 2025-3-22 21:26:12

The Density-of-States Tail and Interband Light Absorptione the density of states is very low. We also discuss a simple modification of this method which allows to estimate the exponent using only the Poisson distribution and elementary quantum mechanics. A classification is proposed for the types of density of states which occur in doped semiconductors. T

不知疲倦 发表于 2025-3-23 02:49:57

The Theory of Heavily Doped and Highly Compensated Semiconductors (HDCS)of this chapter is to calculate critical values of the compensation at which this transition occurs, as well as the activation energy .. in the nonmetallic phase. The results strongly depend on whether the impurity distribution in the semiconductor is correlated or it is of a purely Poisson form.

glowing 发表于 2025-3-23 08:52:37

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查看完整版本: Titlebook: Electronic Properties of Doped Semiconductors; Boris I. Shklovskii,Alex L. Efros Book 1984 Springer-Verlag Berlin Heidelberg 1984 Properti