根除
发表于 2025-3-30 10:04:08
Device Physics Revisited,pe and n-type silicon, we can create a diode. In this chapter, we will study semiconductor physics in more detail, leading us to understand how carriers move inside a diode. Carrier movement can be created by a gradient of carrier concentration, also known as a diffusion current. Carriers can also m
切掉
发表于 2025-3-30 15:23:59
Diode and BJT Equations,inear I-V curves for these devices. We will study the equations for the diode and BJT, using graphical and mathematical techniques to analyze them. This is applied to create a small signal model for the BJT, allowing us to analyze the three basic amplifier topologies.
degradation
发表于 2025-3-30 20:15:11
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ARENA
发表于 2025-3-31 00:37:42
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