FERN 发表于 2025-3-21 18:05:34
书目名称Electronic Defect States in Alkali Halides影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0306257<br><br> <br><br>书目名称Electronic Defect States in Alkali Halides影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0306257<br><br> <br><br>书目名称Electronic Defect States in Alkali Halides网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0306257<br><br> <br><br>书目名称Electronic Defect States in Alkali Halides网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0306257<br><br> <br><br>书目名称Electronic Defect States in Alkali Halides被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0306257<br><br> <br><br>书目名称Electronic Defect States in Alkali Halides被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0306257<br><br> <br><br>书目名称Electronic Defect States in Alkali Halides年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0306257<br><br> <br><br>书目名称Electronic Defect States in Alkali Halides年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0306257<br><br> <br><br>书目名称Electronic Defect States in Alkali Halides读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0306257<br><br> <br><br>书目名称Electronic Defect States in Alkali Halides读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0306257<br><br> <br><br>NICHE 发表于 2025-3-21 21:40:45
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https://doi.org/10.1007/978-981-97-2554-0In this final chapter, we compare the defect systems that we have discussed and summarize their properties in a table. The implications for their use as models systems and for their applications will be discussed as well.招募 发表于 2025-3-22 08:03:57
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Summary,In this final chapter, we compare the defect systems that we have discussed and summarize their properties in a table. The implications for their use as models systems and for their applications will be discussed as well.碌碌之人 发表于 2025-3-22 20:25:16
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Electronic Defect States in Alkali Halides978-3-540-36422-1Series ISSN 0081-3869 Series E-ISSN 1615-0430大都市 发表于 2025-3-23 02:42:12
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https://doi.org/10.1007/978-3-662-58817-8basic properties of the defects considered in the remaining chapters of this book. As in the rest of the text we concentrate on F centers and divalent rare-earth ions. The properties of these defects have been reported in several other monographs, and we shall review here only those aspects that are