延展 发表于 2025-3-21 18:05:36
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Field-Effect Transistor,tes bipolar junction transistor (BJT) as the first patent that was granted for such a device in 1928. Its impact on industry however was felt only about a decade after the development of the transistor in 1948. FET is a unipolar device having only one p–n junction, and it differs from BJT in severaldiskitis 发表于 2025-3-22 07:00:10
BJT and FET Models, need for biasing was established, and various biasing schemes were presented. Also, the operation of the BJT and FET as amplifiers each in three configurations was discussed. While the utilized methods gave reasonably good answers, more precise design requires the use of BJT and FET models or equivCoterminous 发表于 2025-3-22 09:43:12
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Power Amplifiers,ns including music systems, in driving industrial loads, and elsewhere. In small-signal amplifiers, the active devices are operated such that the voltage and current changes are small and the devices are operated in their approximately linear regions. In such amplifiers, the main factors are amplifi兵团 发表于 2025-3-23 09:29:16
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