修改
发表于 2025-3-27 00:19:37
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malign
发表于 2025-3-27 03:53:31
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CRUE
发表于 2025-3-27 08:34:35
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裁决
发表于 2025-3-27 13:25:02
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pacific
发表于 2025-3-27 14:46:36
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一骂死割除
发表于 2025-3-27 20:24:26
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古代
发表于 2025-3-28 00:29:45
Hysteria, Trauma and Melancholiare-dates the BJT as the first patent was granted for such a device in 1928. Its impact on industry however was felt only about a decade after the development of the transistor in 1948. The FET is a unipolar device having only one p-n junction, and it differs from the BJT in several important respect
颠簸地移动
发表于 2025-3-28 04:36:58
https://doi.org/10.1057/9780230597365sented. Also, the operation of the BJT and FET as amplifiers each in three configurations was discussed. While the methods utilized gave reasonably good answers, more precise design requires the use of BJT and FET models or equivalent circuits. The models we adopt are the hybrid parameter or h-param
CLIFF
发表于 2025-3-28 09:54:01
Hysterical Methodologies in the Artsented in a wide range of applications as well as perform some special functions. In this chapter, the design and application of many of these circuits will be discussed. After completing the chapter, the reader will be able to:
legislate
发表于 2025-3-28 12:25:38
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