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Internal Gettering as a Function of the Wafer Position in the Original Crystal Rodocesses as a function of the wafer position in the original crystal rod. The purpose of the investigations was to clarify whether inhomogeneities in internal gettering which were observed previously can be explained by the respective wafer position in the crystal..The results exhibit drastic variatiPert敏捷 发表于 2025-3-31 02:09:19
Preamorphization Techniques for Shallow Junctions in SIinvestigate the preamorphization technique as a tool to prevent channeling during transistor fabrication. Implantation of heavy ions such as Si. and Ge. offers the possibility of amorphizing a desired region in a highly controllable way. The preamorphization experiments were carried out using these文件夹 发表于 2025-3-31 05:24:16
Very High Speed Bipolar Technology and Circuits Tipbase Bipolar Advanced Silicon for Europemens, SGS-Thomson, Plessey and Telefunken..It covers a period of three years. Effective work started on Feb. 1, 1989, the first year being a definition phase..The project is headed by Europe’s most competent partners in this field. It is firmly based on common ground partially developed within previ懒惰人民 发表于 2025-3-31 09:11:05
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Combined Analog Digital Integration: CANDI goal of the CANDI project is to develop a mixed analog digital BICMOS technology with the related CAD and design techniques. During the first phase of the project, a 1.2.m BICMOS process has been developed and optimized.; the objective of this technology is to achieve simultaneously high density CMexceed 发表于 2025-3-31 22:27:00
Terminological Information Management in ADKMSgical approach. We describe an application scenario in which organisational information about a large Company Group is acquired for a knowledge base. The application (developed by the project group of Datamont SpA, Milano) reveals a number of requirements which are contrasted with the service offere