秘传
发表于 2025-3-27 00:54:57
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micturition
发表于 2025-3-27 03:22:30
Hardware-in-the-Loop Simulation of High-Power Modular Converters and Drives equations. The use of HIL simulators is common today in the industry to accelerate design cycles, mitigate financial and human risks and support software updates throughout the product life cycle..The first case presented is a 2-level inverter scheme in which increasing power specifications are met
逃避系列单词
发表于 2025-3-27 06:52:40
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JUST
发表于 2025-3-27 12:22:53
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细胞
发表于 2025-3-27 15:33:02
Electrothermal Characterization of Double-Sided Cooling Si Power Modulearameter of power devices. Different methods exist for junction temperature measurement. In this work, an electrical method based on temperature sensitive electrical parameter (TSEP) is conducted to estimate the junction temperature of the power module. A 3D thermal model was built to better compreh
lipoatrophy
发表于 2025-3-27 18:42:42
Integrated Design Process and Sensitivity Analysis of a Hybrid Electric Propulsion System for Futureare the key challenges to address fuel reduction and environmental constraints. In the first part, the integrated design process aiming the overall power train optimization is described. The second part presents models specifically oriented towards the integrated design. Finally, a sensitivity analy
tooth-decay
发表于 2025-3-28 01:59:44
Direct Torque Control Applied to DFIG Supplied via a Three-Level Inverter Under Random Behavior Wind its rotor via a back-to-back converter. This one is supplied via a three-level inverter in the rotor side and controlled with a flexible algorithm based on DTC technique, to ensure mastery of this generator. The main aim of this contribution is to analyze the performances and robustness of the prop
去世
发表于 2025-3-28 04:08:40
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奇怪
发表于 2025-3-28 06:57:06
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Indurate
发表于 2025-3-28 12:47:42
Low-Side MOSFET Current Sensing Technique for Automotive Applicationss of an inverter. In this case the power MOSFET is utilized as a current sensor, by estimating its internal on-state resistance. Due to the temperature dependency of the internal on-state resistance, the temperature of MOSFET die has been also estimated by measuring the internal body diode forward v