TAIN 发表于 2025-3-30 10:05:28
https://doi.org/10.1007/978-3-319-76986-8The contribution is based on initial research experiences of the development of spatially explicit vulnerability indicators for Impacts of climate change on the high-dense urban area of Ho Chi Minh City using a Matrix of extended Urban Structure Type and Landusemap.集合 发表于 2025-3-30 14:39:03
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http://reply.papertrans.cn/31/3004/300393/300393_53.png引起痛苦 发表于 2025-3-30 21:44:30
http://reply.papertrans.cn/31/3004/300393/300393_54.pngCommunicate 发表于 2025-3-31 03:27:51
Markus May,Peter Goßens,Jürgen Lehmannion to this problem is to develop energy generation technologies that remove heat from the climate system, or as a temporary solution ‘dump’ heat in the deep ocean. Two such technologies, both relying on solar energy, are discussed in this paper.CYT 发表于 2025-3-31 06:42:38
Celebrating Katherine Mansfieldnge of 20-100 ppm and the ozone to toluene ratio was increased from 1.0 to 15.0. The reaction temperature was controlled between 25-100°C and the space velocity was fixed at 20000 h-1. The CO. selectivity was enhanced considerably by the catalyst supported on TiO. (thermal decomposition process) afthyperuricemia 发表于 2025-3-31 13:13:04
,‘Wives All’: Emma and Florence Hardy,this research will focus on the benefits of Sci-Art collaboration for education. Collaborative artworks and exhibitions are the final outcome of this project; they explore the ways in which Sci-Art can be developed as a useful form of interdisciplinary practice. These creative methods provide a routSTALE 发表于 2025-3-31 16:59:40
Introduction: Starring the Author, understood through the FEM simulation. It was concluded that ZnO nanowires can generate electric current by the piezoelectric effect and ZnO nanowires have potential to be used as a power source for nano-scale devices..To conclude, the work is concentrated on the design of the artificial basilar meRebate 发表于 2025-3-31 18:13:47
https://doi.org/10.1057/978-1-137-37334-2ts and dopant concentrations. In addition, HV and LV process integration issues of a 0.18 .m HV-CMOS technology, which play a key role to efficiently implement a HV module into a deep submicron CMOS process, are described. Key issues of p-channel LDMOS transistors are reviewed. The hot-carrier (HC)