architect
发表于 2025-3-21 16:59:00
书目名称Devices Based on Low-Dimensional Semiconductor Structures影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0270339<br><br> <br><br>书目名称Devices Based on Low-Dimensional Semiconductor Structures影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0270339<br><br> <br><br>书目名称Devices Based on Low-Dimensional Semiconductor Structures网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0270339<br><br> <br><br>书目名称Devices Based on Low-Dimensional Semiconductor Structures网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0270339<br><br> <br><br>书目名称Devices Based on Low-Dimensional Semiconductor Structures被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0270339<br><br> <br><br>书目名称Devices Based on Low-Dimensional Semiconductor Structures被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0270339<br><br> <br><br>书目名称Devices Based on Low-Dimensional Semiconductor Structures年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0270339<br><br> <br><br>书目名称Devices Based on Low-Dimensional Semiconductor Structures年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0270339<br><br> <br><br>书目名称Devices Based on Low-Dimensional Semiconductor Structures读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0270339<br><br> <br><br>书目名称Devices Based on Low-Dimensional Semiconductor Structures读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0270339<br><br> <br><br>
影响
发表于 2025-3-21 22:21:05
Hot Hole Effects in Strained Multi-Quantum-Well Heterostructures Ge/GeSited as a result of hydrostatic compression and equivalent uniaxial tension PeqUiv of Ge layers; the latter is responsible for the valence band splitting. Earlier we have observed the cyclotron resonance (CR) absorption line of high mobility light 2D holes in split valence band in Ge layers and r
creditor
发表于 2025-3-22 04:17:33
http://reply.papertrans.cn/28/2704/270339/270339_3.png
多产鱼
发表于 2025-3-22 07:03:14
https://doi.org/10.1007/978-3-319-44694-3ted as a result of hydrostatic compression and equivalent uniaxial tension PeqUiv of Ge layers; the latter is responsible for the valence band splitting. Earlier we have observed the cyclotron resonance (CR) absorption line of high mobility light 2D holes in split valence band in Ge layers and r
勉励
发表于 2025-3-22 08:45:19
M. J. Bishop,Elizabeth Boling,Vanessa Svihla . The usage of the peculiarity of these distributions gives an opportunity to increase the average electron velocity at certain conditions. We consider for this purpose the HS with special layers intended for the stimulation of emission of LOP at assigned places. The spatially localized emission
Discrete
发表于 2025-3-22 16:25:15
http://reply.papertrans.cn/28/2704/270339/270339_6.png
Discrete
发表于 2025-3-22 18:52:34
Book 1996of pseudomorphic HEMTtechnology, device physics and materials layer design are presented.Each aspect is reviewed from the elementary basics up to the latestdevelopments. ..Audience:. Undergraduates in electrical engineering, graduates inphysics and engineering schools. Useful for active scientists a
有常识
发表于 2025-3-22 22:30:07
http://reply.papertrans.cn/28/2704/270339/270339_8.png
脱毛
发表于 2025-3-23 05:17:55
Using Gaseous Sources in Molecular Beam Epitaxy use of gaseous organometallic group IE sources in selective-area epitaxy, either by laser irradiation or on patterned substrates. Finally the use of gaseous dopant sources are described, in particular, carbon doping with halomethanes.
违法事实
发表于 2025-3-23 06:22:55
http://reply.papertrans.cn/28/2704/270339/270339_10.png