GRASS
发表于 2025-3-21 18:38:09
书目名称Device Physics, Modeling, Technology, and Analysis for Silicon MESFET影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0270330<br><br> <br><br>书目名称Device Physics, Modeling, Technology, and Analysis for Silicon MESFET影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0270330<br><br> <br><br>书目名称Device Physics, Modeling, Technology, and Analysis for Silicon MESFET网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0270330<br><br> <br><br>书目名称Device Physics, Modeling, Technology, and Analysis for Silicon MESFET网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0270330<br><br> <br><br>书目名称Device Physics, Modeling, Technology, and Analysis for Silicon MESFET被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0270330<br><br> <br><br>书目名称Device Physics, Modeling, Technology, and Analysis for Silicon MESFET被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0270330<br><br> <br><br>书目名称Device Physics, Modeling, Technology, and Analysis for Silicon MESFET年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0270330<br><br> <br><br>书目名称Device Physics, Modeling, Technology, and Analysis for Silicon MESFET年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0270330<br><br> <br><br>书目名称Device Physics, Modeling, Technology, and Analysis for Silicon MESFET读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0270330<br><br> <br><br>书目名称Device Physics, Modeling, Technology, and Analysis for Silicon MESFET读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0270330<br><br> <br><br>
挣扎
发表于 2025-3-21 22:40:18
Device Physics, Modeling, Technology, and Analysis for Silicon MESFET978-3-030-04513-5
eczema
发表于 2025-3-22 00:35:34
rehensive information on the structure and operation of sili.This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that a
adroit
发表于 2025-3-22 04:34:51
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轻信
发表于 2025-3-22 10:30:15
https://doi.org/10.1007/978-3-030-98507-3, we develop a modified two-dimensional analytical model for the device which is free of the problems associated with the previous models. By using the presented model, the subthreshold behavior of the device is displayed and discussed. Also, the impact of device parameters and bias conditions on the device performance is investigated.
FLINT
发表于 2025-3-22 14:35:48
Analytical Investigation of Subthreshold Performance of SOI MESFET Devices,mpared with the conventional SOI MESFET. Also, the improvement in short-channel behavior of the presented devices is shown. Lastly, the TCAD simulation for each device is accomplished. The accuracy of the presented analytical models is verified by comparison with the numerical simulation results obtained by device simulator ATLAS from Silvaco.
FLINT
发表于 2025-3-22 20:49:53
re important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications..978-3-030-04513-5
发电机
发表于 2025-3-22 21:41:46
Book 2019with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also incl
强制性
发表于 2025-3-23 04:31:52
,General Overview of the Basic Structure and Operation of a Typical Silicon on Insulator Metal–Semicheir influence on the normal operation of MOS transistors are described. The different technical solutions presented to resolve the problems caused by short-channel effects are discussed. Finally, the structures and advantages of non-classical devices and their feasibility in the settling of the short-channel effects are described.
背带
发表于 2025-3-23 08:00:49
Modeling of Classical SOI MESFET,, we develop a modified two-dimensional analytical model for the device which is free of the problems associated with the previous models. By using the presented model, the subthreshold behavior of the device is displayed and discussed. Also, the impact of device parameters and bias conditions on the device performance is investigated.