FAR
发表于 2025-3-23 12:17:24
RF MEMS Process of Fraunhofer ISiT,crowave losses. In order to prevent DC-currents and bias-dependent leakage from flowing into the substrate, the silicon surface is typically covered with 500 to 2,000 nm thick layer of oxide. The substrate in the ISiT technology is composed of a 508 .m thick high-resistivity silicon layer with a res
GIDDY
发表于 2025-3-23 13:58:45
Designing Inductors,rcuits. The quality factor (Q) is among the most important parameters in order to evaluate an inductor’s performance. Unfortunately, quality factor and frequency limitations limit RF front-end circuitry to a large number of discrete passive components and make RF front-end module integration difficu
独轮车
发表于 2025-3-23 20:53:43
DC-Block Modeling,fferent combinations of dielectric layers (a single AlN layer, a single SiN layer, or a combination of both, refer to Chap. . for explanation of the layers), and different geometrical dimensions (overlap length, center metal width, ground metal width, ...). In the literature there are numerous artic
栖息地
发表于 2025-3-23 23:33:28
Summary,nder the oxide layer of the ISiT substrate. It was shown that this makes it possible to predict the losses of passive elements in this technology by setting the substrate loss to zero in the EM simulations. This in turn assures that the simulated results shown here for the losses are close to realit
失望未来
发表于 2025-3-24 04:36:01
Design and Modeling of Inductors, Capacitors and Coplanar Waveguides at Tens of GHz Frequencies978-3-319-10187-3Series ISSN 2191-8112 Series E-ISSN 2191-8120
Synapse
发表于 2025-3-24 07:41:15
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Prostatism
发表于 2025-3-24 13:57:41
Naser Pour AryanProvides a concise and easily accessible introduction to design and modelling of basic passive elements at extremely high frequencies.Brings readers up to date in key concepts, underlying principles a
ALB
发表于 2025-3-24 18:20:11
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JAMB
发表于 2025-3-24 20:11:29
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HERE
发表于 2025-3-25 01:27:54
Book 2015of GHz. The author explains the design and modelling of key, passive elements, such as capacitors, inductors and transmission lines that enable high frequency MEMS operating at frequencies in the orders of tens of GHz..