Radiofrequency
发表于 2025-3-21 17:00:56
书目名称Defects in SiO2 and Related Dielectrics: Science and Technology影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0264731<br><br> <br><br>书目名称Defects in SiO2 and Related Dielectrics: Science and Technology影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0264731<br><br> <br><br>书目名称Defects in SiO2 and Related Dielectrics: Science and Technology网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0264731<br><br> <br><br>书目名称Defects in SiO2 and Related Dielectrics: Science and Technology网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0264731<br><br> <br><br>书目名称Defects in SiO2 and Related Dielectrics: Science and Technology被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0264731<br><br> <br><br>书目名称Defects in SiO2 and Related Dielectrics: Science and Technology被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0264731<br><br> <br><br>书目名称Defects in SiO2 and Related Dielectrics: Science and Technology年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0264731<br><br> <br><br>书目名称Defects in SiO2 and Related Dielectrics: Science and Technology年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0264731<br><br> <br><br>书目名称Defects in SiO2 and Related Dielectrics: Science and Technology读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0264731<br><br> <br><br>书目名称Defects in SiO2 and Related Dielectrics: Science and Technology读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0264731<br><br> <br><br>
libertine
发表于 2025-3-21 22:31:48
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notion
发表于 2025-3-22 02:00:53
INTERACTION OF SiO2 GLASSES WITH HIGH ENERGY ION BEAMS AND VACUUM UV EXCIMER LASER PULSEScult due to its thermal expansion coefficient that is ~30 times larger than that of SiO. glass. Thus, SiO.-based glasses would be veiy suitable as photomask materials, provided that the necessary specifications for transparency and radiation resistance can be met. In this article, we describe defect
endarterectomy
发表于 2025-3-22 07:23:49
GE AND SN DOPING IN SILICA: STRUCTURAL CHANGES, OPTICALLY ACTIVE DEFECTS, PARAMAGNETIC SITESnsic defects (as oxygen vacancies) by changing the thermochemical conditions during the material synthesis . Indeed, Ge and Sn doping cause perturbations in the structural and defect-related properties, and these are important for the occurrence of photoconversion of optically active defects and
champaign
发表于 2025-3-22 11:55:45
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兽皮
发表于 2025-3-22 14:45:28
PERIODIC UV-INDUCED INDEX MODULATIONS IN DOPED-SILICA OPTICAL FIBERS: FORMATION AND PROPERTIES OF THpplications have motivated continued intense study, a brief appendix introduces several FBG-based technologies in terms of relevant intrinsic properties. A central objective is to direct the reader to readily available original publications from the growing community of involved researchers. In part
兽皮
发表于 2025-3-22 18:45:02
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aristocracy
发表于 2025-3-22 23:20:00
https://doi.org/10.1007/978-1-4899-0792-9d voltage shifts in MOS transistors. It is easy to imagine how improvements in identification and control of these defects could result in billions of dollars in cost savings to photonics and semiconductor industries over the next decade.
resuscitation
发表于 2025-3-23 01:51:13
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BROOK
发表于 2025-3-23 09:00:56
Fault Diagnosis of Discrete-Event Systemscult due to its thermal expansion coefficient that is ~30 times larger than that of SiO. glass. Thus, SiO.-based glasses would be veiy suitable as photomask materials, provided that the necessary specifications for transparency and radiation resistance can be met. In this article, we describe defect