Mangle
发表于 2025-3-23 13:32:58
Bernhard WichtComprehensive theoretical and practical information on current sensing for SRAM is provided in this book for the first time.Includes supplementary material:
衣服
发表于 2025-3-23 14:27:56
Springer Series in Advanced Microelectronicshttp://image.papertrans.cn/d/image/241314.jpg
Inordinate
发表于 2025-3-23 22:05:55
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未完成
发表于 2025-3-24 01:23:22
5G for Future Wireless NetworksThe write operation of the static 6-transistor memory cell described in Sect. 2.1 requires the bitline potential to be lowered until the cell toggles. While this inherent property of the memory cell is essential for writing it also represents a source for failure as an unwanted toggling may occur outside of the write cycle, especially during read.
EXUDE
发表于 2025-3-24 05:45:39
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骚扰
发表于 2025-3-24 10:28:46
Interaction with the Memory Cell,The write operation of the static 6-transistor memory cell described in Sect. 2.1 requires the bitline potential to be lowered until the cell toggles. While this inherent property of the memory cell is essential for writing it also represents a source for failure as an unwanted toggling may occur outside of the write cycle, especially during read.
optic-nerve
发表于 2025-3-24 13:26:02
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反叛者
发表于 2025-3-24 15:03:48
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Myelin
发表于 2025-3-24 21:35:03
Current Sense Amplifiers for Embedded SRAM in High-Performance System-on-a-Chip Designs978-3-662-06442-9Series ISSN 1437-0387 Series E-ISSN 2197-6643
Vulvodynia
发表于 2025-3-25 01:53:45
https://doi.org/10.1007/978-3-030-17513-9le current sense amplifier. The focus will be on an implementation of Type D in a 130nm CMOS process technology with 1.5V being the nominal supply voltage. The outstanding properties of Type D current sensing in terms of speed, multiplexer compensation and operation at low supply voltages have been shown in Chaps. 4 and 5.