credit
发表于 2025-3-21 18:44:32
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形上升才刺激
发表于 2025-3-21 23:20:21
ed potential. A direct result of this has been the development of the a-Si field-effect transistor (FET), discussed in Section 16.3, which could find applications in large-area addressable displays, in addressable image-sensing arrays, and in logic circuits.
整理
发表于 2025-3-22 02:47:02
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chondromalacia
发表于 2025-3-22 06:25:59
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易改变
发表于 2025-3-22 11:55:24
Book 1986c introductory material on chemical bonding, electronic band structure, phonons, and electronic transport, some emphasis is placed on surface and interfacial properties, as weil as effects of doping with a variety of impurities. Against this background, the use of such materials in device physics is
grudging
发表于 2025-3-22 13:24:36
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grudging
发表于 2025-3-22 19:07:02
James K. Galbraith,Anthony Heathucially relies on progress in the physics of semiconductors.. Supported and stimulated by the development of forefront technologies, basic research continues to blossom on this branch of materials science, in a unique interplay between pure and applied physics..
污秽
发表于 2025-3-22 23:08:53
Daniel Stedman Jones,Ben Jacksonc semiconductors, namely semiconductors containing paramagnetic impurities, and in Section 9.4 half-metallic ferromagnets, which are metallic for spin-up electrons and semiconducting for spin-down electrons.
疾驰
发表于 2025-3-23 01:51:37
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Exposition
发表于 2025-3-23 07:07:35
The Electronic Structure of Surfaces and Interfaces, the best example for which those new states play an important role, the reason being that new states appear at the Fermi level. These states are crucial to understanding junctions between, say, metals and semiconductors, and for clean semiconductor surfaces.