袖章
发表于 2025-3-25 06:41:30
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使出神
发表于 2025-3-25 10:48:41
Accountability, Silences and Journalism,gnificant exception to this is undoped semi-insulating gallium arsenide). The device specification will require that the doping level is precisely controlled and that it be uniform throughout the crystal boule both on a macroscopic and on a microscopic scale. Since the pulling process is essentially
纬线
发表于 2025-3-25 12:33:30
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动物
发表于 2025-3-25 17:35:15
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为敌
发表于 2025-3-25 22:21:17
Congruent and Discordant Habitus,ion of a finite melt has already been considered. Additionally it has been shown that a macroscopic radial non-uniformity can result from flow conditions under which the solute boundary layer does not remain embedded within a momentum boundary layer flow characterised by the rotating crystal. Such a
Peculate
发表于 2025-3-26 03:50:32
Congruent and Discordant Habitus,of silicon, size and uniformity are paramount. To this end it is likely that the process will be modified from a strictly batch process to a semi-continuous one where the melt is continuously replenished. This is not as straightforward as it may sound, one serious problem being the build up of impur
RENIN
发表于 2025-3-26 07:05:43
What Constitutes Whistleblowing?,The elegant, but deceptively complex, technique of pulling single crystals from a melt by first dipping a seed crystal into that melt has been developed over the last forty years to become the dominant technique for the production of bulk single crystals of a wide range of materials for the electronics and electro-optic industries.
卷发
发表于 2025-3-26 12:05:53
What Constitutes Whistleblowing?,The importance of melt flow in controlling dopant incorporation and distribution on both macroscopic and microscopic scales was made evident in the previous chapter for the cases of silicon, gallium arsenide and oxide crystal growth.
maroon
发表于 2025-3-26 16:17:47
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渐变
发表于 2025-3-26 18:43:03
Convection and Flow in the Melt,The importance of melt flow in controlling dopant incorporation and distribution on both macroscopic and microscopic scales was made evident in the previous chapter for the cases of silicon, gallium arsenide and oxide crystal growth.