Hallmark 发表于 2025-3-30 08:18:23

,Meßverfahren bei stationärem Wärmefluß,to reveal the history of a sample and its molecular characteristics but also to provide insight into crystal growth mechanisms themselves. This contribution seeks to introduce the principal and salient facts of polymeric growth, relate these to properties, both known and potential and to outline the current state of understanding.

NORM 发表于 2025-3-30 14:08:21

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BAN 发表于 2025-3-30 19:40:36

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GLUT 发表于 2025-3-30 21:03:35

Twinning in Crystals,ting to describe. Their investigation was rather academic, with useful aspects in the determination of minerals. New impulses for the investigation of twinning have been connected with practical uses of crystalline materials (metals, quartz).

intuition 发表于 2025-3-31 01:40:48

Crystal Growth and Geosciences,fferent mineral assemblages, different morphologies and perfections of crystals, and different textures of rocks or ores appear. Therefore, it is essential to understand the fundamentals of crystal growth mechanisms so as to properly analyze the genesis of minerals, rocks and ores, which is one of the main subject of geosciences.

安慰 发表于 2025-3-31 07:27:07

certain physical phenomena. Growing crystals by trial and error or concentrating only on nucleation and growth kinetics aspects, will give us crystals with unknown stoichiometries or defect concentrations and therefore with unreproducible physical properties.

Climate 发表于 2025-3-31 09:35:26

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remission 发表于 2025-3-31 14:06:37

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maverick 发表于 2025-3-31 21:31:49

Nucleation,the overall mechanism is dominated by the thermodynamic properties of the embryos of the new phase, it can be (and has been, first) considered by the methods of heterophase thermodynamics. This is also the way nucleation is taught in common courses and manuals. However, one must be aware that every

Alpha-Cells 发表于 2025-4-1 00:57:30

Fundamentals of Crystal Growth from Vapors,etals, as well as for the growth of some semiconductor bulk crystals. The vapor growth of bulk materials is typically conducted in closed or semi-closed systems. If the vapor pressure of a material at a desired growth temperature exceeds 10. torr or so, it may be efficiently grown by Physical Vapor
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查看完整版本: Titlebook: Crystal Growth in Science and Technology; H. Arend,J. Hulliger Book 1989 Plenum Press, New York 1989 Epitaxy.Helium-Atom-Streuung.Metall.N